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Phototunable Biomemory Based on Light-Mediated Charge Trap

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成果类型:
期刊论文
作者:
Lv, Ziyu;Wang, Yan;Chen, Zhonghui;Sun, Long;Wang, Junjie;...
通讯作者:
Han, Su-Ting;Roy, Vellaisamy A. L.;Zhou, Ye
作者机构:
[Zhou, Li; Zhou, Kui; Wang, Yan; Lv, Ziyu; Han, Su-Ting; Chen, Xiaoli; Wang, Junjie] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China.
[Lv, Ziyu; Roy, Vellaisamy A. L.] City Univ Hong Kong, Dept Mat Sci & Engn, Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China.
[Lv, Ziyu; Roy, Vellaisamy A. L.] City Univ Hong Kong, State Key Lab Millimeter Waves, Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China.
[Chen, Zhonghui] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, 122 Luoshi Rd, Wuhan 430070, Hubei, Peoples R China.
[Sun, Long] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China.
通讯机构:
[Han, Su-Ting; Zhou, Ye] S
[Roy, Vellaisamy A. L.] C
Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China.
City Univ Hong Kong, Dept Mat Sci & Engn, Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China.
City Univ Hong Kong, State Key Lab Millimeter Waves, Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China.
语种:
英文
关键词:
carbon dots;charge trapping;Kelvin probe force microscopy;resistive switching;silk
期刊:
Advanced Science
ISSN:
2198-3844
年:
2018
卷:
5
期:
9
页码:
1800714-
基金类别:
The authors acknowledge the grants from Natural Science Foundation of China (Grant Nos. 61601305 and 61604097), the Science and Technology Innovation Commission of Shenzhen (Grant Nos. JCYJ20170818143618288, JCYJ20170302145229928, JCYJ20170302151653768, KQJSCX20170727100433270, and KQJSCX20170327150812967), Guangdong Provincial Department of Science and Technology (Grant No. 2017A010103026), the Department of Education of Guangdong Province (Grant Nos. 2015KQNCX141 and 2016KTSCX120), the Natural Science Foundation of SZU, the City University of Hong Kong's Research Grant Project (no. 9667145), and RGC of Hong Kong Project no. T42-103/16N.
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材料复合新技术国家重点实验室
摘要:
Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)-silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and sca...

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