Highly dense AlN–SiC composites with various SiC additions (0–50 wt-%) were fabricated at 1800°C by plasma activated sintering. The effect of SiC addition on structural, thermal and dielectric properties as well as microwave absorbing performance of the composites was investigated. The thermal conductivity decreases with increasing SiC addition, from 68.7 W (m K)−1 for 0 wt-% SiC to 19.38 W (m K)−1 for 50 wt-% SiC. On the contrary, the permittivity and dielectric loss increase gradually, from 7.6–8.5 to 22–26.7 and from 0.02–0.1 to 0.2–...
