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Molecular dynamics simulations of AlN deposition on GaN substrate

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成果类型:
期刊论文、会议论文
作者:
Zhang, Libin;Yan, Han;Sun, Kuan;Liu, Sheng;Gan, Zhiyin*
通讯作者:
Gan, Zhiyin
作者机构:
[Zhang, Libin; Sun, Kuan; Liu, Sheng; Gan, Zhiyin] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Hubei, Peoples R China.
[Yan, Han] Wuhan Univ Technol, Sch Mech & Elect Engn, Wuhan, Hubei, Peoples R China.
[Liu, Sheng] Wuhan Univ, Sch Power & Mech Engn, Wuhan, Hubei, Peoples R China.
通讯机构:
[Gan, Zhiyin] H
Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Hubei, Peoples R China.
语种:
英文
关键词:
AlN film;molecular dynamics;GaN substrate surface;surface morphology;crystallinity
期刊:
Molecular Physics
ISSN:
0026-8976
年:
2019
卷:
117
期:
13
页码:
1758-1767
会议名称:
3rd Anharmonicity in Medium-Sized Molecules and Clusters (AMOC) International Conference / 3rd General Meeting of COST-Action-CM1405-Molecules-in-Motion (MOLIM)
会议时间:
APR 16-21, 2018
会议地点:
Budapest, HUNGARY
会议主办单位:
[Zhang, Libin;Sun, Kuan;Liu, Sheng;Gan, Zhiyin] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Hubei, Peoples R China.^[Yan, Han] Wuhan Univ Technol, Sch Mech & Elect Engn, Wuhan, Hubei, Peoples R China.^[Liu, Sheng] Wuhan Univ, Sch Power & Mech Engn, Wuhan, Hubei, Peoples R China.
会议赞助商:
European Cooperat Sci & Technol, European Cooperat Sci & Technol Act CM1405 Mol Mot
出版地:
2-4 PARK SQUARE, MILTON PARK, ABINGDON OR14 4RN, OXON, ENGLAND
出版者:
TAYLOR & FRANCIS LTD
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51727901, 51476068, 51402224]
机构署名:
本校为其他机构
院系归属:
机电工程学院
摘要:
In this work, we investigated the deposition of AlN film on GaN substrate by using molecular dynamics (MD) simulations. The effects of GaN substrate surface, growth temperature, and injected N: Al flux ratio on the growth of AlN film were simulated and studied. Consequently, the deposited AlN film on the (0001) Ga-terminated GaN surface achieves better surface morphology and crystallinity than that on the (000-1) N-terminated GaN surface due to the different diffusion ability of Al and N adatoms on two GaN surfaces. Furthermore, with the increase of growth temperature, the surface morphology a...

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